5

TPS1663

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SLVSET9D – SEPTEMBER 2018 – REVISED AUGUST 2019

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(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

IN, P_IN, OUT, UVLO, FLT, PGOOD

Input Voltage

–0.3

67

V

–0.3

75

OVP, dVdT, IMON, MODE, SHDN,

ILIM

–0.3

5.5

Sink current

10

mA

Source current

Internally limited

Operating Junction temperature

–40

150

°C

Transient junction temperature

–65

Storage temperature

–65

150

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per

±2000

V

Charged device model (CDM), per JEDEC

±1000

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

IN, P_IN

Input Voltage

4.5

60

V

OUT, UVLO, PGOOD, FLT

0

60

OVP, dVdT, IMON, MODE

0

4

SHDN

0

5

ILIM

Resistance

3

30

k

Ω

PLIM

60.4

150

IMON

1

IN, P_IN, OUT

External Capacitance

0.1

µF

dVdT

10

nF

Operating Junction temperature

–40

25

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

TPS1663

UNIT

RGE (VSON)

PWP (HTSSOP)

24 PINS

20 PINS

Junction-to-ambient thermal resistance

31.4

32.2

°C/W

Junction-to-case (top) thermal resistance

23.2

23.4

°C/W

Junction-to-board thermal resistance

10.2

10

°C/W

Junction-to-top characterization parameter

0.3

0.3

°C/W

Junction-to-board characterization parameter

10.2

9.9

°C/W