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EMIF02-MIC02F2 数据表(PDF) 2 Page - STMicroelectronics |
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EMIF02-MIC02F2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() EMIF02-MIC02F2 2/7 Table 2: Absolute Ratings (limiting values) Table 3: Electrical Characteristics (Tamb = 25°C) Symbol Parameter and test conditions Value Unit Tj Maximum junction temperature 125 °C Top Operating temperature range - 40 to + 85 °C Tstg Storage temperature range - 55 to + 150 °C Symbol Parameter VBR Breakdown voltage IRM Leakage current @ VRM VRM Stand-off voltage VCL Clamping voltage Rd Dynamic impedance IPP Peak pulse current RI/O Series resistance between Input & Output Cline Input capacitance per line Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 14 16 V IRM VRM = 12V per line 500 nA RI/O 423 470 517 Ω Cline @ 0V 16 pF Figure 3: S21 (dB) attenuation measurement and Aplac simulation Figure 4: Analog crosstalk measurements 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G - 50.00 - 45.00 - 40.00 - 35.00 - 30.00 - 25.00 - 20.00 - 15.00 - 10.00 dB f/Hz dB Measurement Simulation 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 dB f/Hz - - - - - - I2/O1 I V IPP VCL VBR VRM IR IRM IRM IR IPP VRM VBR VCL |
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