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RBQ10BM100AFH 数据表(PDF) 2 Page - Rohm |
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RBQ10BM100AFH 数据表(HTML) 2 Page - Rohm |
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2 / 10 page ![]() RBQ10BM100AFH Data sheet ●Electrical Characteristics (Tj=25ºC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage(1) VF IF=5A - - 0.77 V Reverse current(1) IR VR=100V - - 80 μA Note (1) Value per diode ●Thermal Characteristics Parameter Symbol Min. Typ. Max. Unit Thermal Resistance (Junction to case)(1) (2) Per diode RθJC - - 2.4 ℃/W Per device - - 1.4 ℃/W Thermal Resistance (Junction to ambient)(1) (3) RθJA - - 75 ℃/W Notes (1) Value is guaranteed by design. (2) Transient dual interf ace measurement (TDIM) method. (3) Mounted on 50 x 50 x 1.6mm FR4 board,single-sided copper,35μm thickness,ref erence f ootprint. ●Characteristic Curves www.rohm.com © 2018- ROHMCo., Ltd. All rights reserved. 2/6 2018/06/22_Rev.001 |
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