SEMICONDUCTOR

TECHNICAL DATA

DF2005 ~ DF210

2015. 01. 20

1/2

Revision No : 0

Bridge Rectifier

■

Features

■

Outline Dimensions and Mark

●

2.0A

●

50V~1000V

●

Glass passivated chip

■

Applications

●

General purpose 1 phase Bridge

rectifier applications

■

Limiting Values（Absolute Maximum Rating

Item

Symbol Unit

Conditions

DF2

005 01 02 04 06 08 10

Repetitive Peak Reverse

Voltage

V

50 100 200 400 600 800 1000

Average Rectified Output

Current

A

Ta=25℃

60Hz sine wave,

R-load, Ta=25℃

On glass-epoxi substrate

2.0

Surge(Non-

repetitive)Forward Current

A

60

Current Squared Time

15

Storage Temperature

℃

-55 ~+150

Junction Temperature

℃

-55 ~+150

■

Item

Symbol Unit

Test Condition

Max

Peak Forward Voltage

V

1.1

Peak Reverse Current

μ

A

10

Thermal Resistance

℃

/W

Between junction and ambient, On glass-epoxi substrate

40

Between junction and lead

15

DF

Dim

Min

Max

A

7.40

7.90

B

6.15

6.55

C

0.22

0.30

D

1.27

2.03

E

7.60

8.90

G

3.81

4.69

H

8.10

8.50

J

2.20

2.60

K

5.00

5.20

L

0.46

0.58

All Dimensions in mm

E

H

L

K

A

D

C

G

B

J