NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

N21

10

-

3000/Tape & Reel

•

10000/Tape & Reel

We declare that the material of product compliance with

RoHS requirements.

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,

making the device design easy.

Inverter, Interface, Driver

Features

•

DTC511T1G

DTC511T3G

N21

10

-

Absolute maximum ratings (Ta=25

°C)

Electrical characteristics (Ta=25

°C)

3

COLLECTOR

2

EMITTER

1

BASE

R1

Parameter

Symbol

50

50

5

100

200

150

−55 to

+150

V

V

V

mA

mW

C

C

Tj

Tstg

Unit

Limits

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipa ion

Junction temperature

Storage temperature

Parameter

Symbol

Min.

50

50

5

−

−

100

−

7

−

−

−

−

−

−

250

−

10

250

−

V

=50µA

=1mA

=50µA

=50V

=4V

=10mA/1mA

�

V

V

µA

µA

−

V

kΩ

MHz

Typ.

−

−

−

0.5

0.5

600

0.3

13

−

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Input resistance

Transition frequency

�Characteristics of built-in transistor

SEMICONDUCTOR

TECHNICAL DATA

DTC511

2009. 12. 04

1/3

Revision No : 0

1

3

2

SC-89