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DWC310 数据表(PDF) 1 Page - First Silicon Co., Ltd

部件名 DWC310
功能描述  Dual Bias ResistorTransistors
PDF  10 Pages
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制造商  FS [First Silicon Co., Ltd]
网页  http://www.firstsilicon.co.kr/
标志 FS - First Silicon Co., Ltd

DWC310 数据表(HTML) 1 Page - First Silicon Co., Ltd

  DWC310 Datasheet HTML 1Page - First Silicon Co., Ltd DWC310 Datasheet HTML 2Page - First Silicon Co., Ltd DWC310 Datasheet HTML 3Page - First Silicon Co., Ltd DWC310 Datasheet HTML 4Page - First Silicon Co., Ltd DWC310 Datasheet HTML 5Page - First Silicon Co., Ltd DWC310 Datasheet HTML 6Page - First Silicon Co., Ltd DWC310 Datasheet HTML 7Page - First Silicon Co., Ltd DWC310 Datasheet HTML 8Page - First Silicon Co., Ltd DWC310 Datasheet HTML 9Page - First Silicon Co., Ltd Next Button
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background image
1
3
2
SC-88/SOT-363
6
4
5
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
1
3
2
6
4
5
Q1
Q2
R1
R2
R1
R2
7X
MARKING DIAGRAM
3
1
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
he device marking table on page 2 of
his data sheet.
7X = Device Marking
(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
t
i
n
U
e
u
l
a
V
l
o
b
m
y
S
g
n
i
t
a
R
Collector-Base Voltage
V CBO
50
Vdc
Collector-Emitter Voltage
V CEO
50
Vdc
I
t
n
e
r
r
u
C
r
o
t
c
e
ll
o
C
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P D
187 (Note 1.)
mW
T A = 25°C
Derate above 25°C
mW/°C
Thermal Resistance –
R θJA
670 (Note 1.)
°C/W
)
.
2
e
t
o
N
(
0
9
4
t
n
e
i
b
m
A
-
o
t
-
n
o
i
t
c
n
u
J
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
R θJA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
R θJL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature
T J , T stg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the DWC3xx series, two BRT devices are housed in the SOT–363 package which is ideal
for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• We declare that the material of product compliance with RoHS requirements.
SEMICONDUCTOR
TECHNICAL DATA
DWC301~311
DWC317, 322, 323
2009. 12. 04
1/10
Revision No : 0


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