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FDR54CDW 数据表(PDF) 2 Page - First Silicon Co., Ltd |
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FDR54CDW 数据表(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage VRWM Peak Working Reverse Voltage VR DC Blocking Voltage 30 V IO Forward Continuous Current 200 mA IFRM Repetitive Peak Forward Current 300 IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 600 mA PD Power Dissipation 200 mW RθJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 125 ℃ Tstg Storage Temperature -55~+150 ℃ Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V(BR) IR=100μA 30 V Reverse current IR VR=25V 2 μA IF=1mA 320 IF=10mA 400 IF=30mA 500 Forward voltage VF IF=100mA 1000 mV Total capacitance Ctot VR=1V,f=1MHz 10 pF Reverse recovery time trr IF= IR=10mA, Irr=0.1×IR, RL=100Ω 5 ns a ELECTRICAL CHARACTERISTICS (T =25 ℃ unless otherwise specified) FDR54BRW 2018. 09. 18 2/5 Revision No : 0 |
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