FDR1020E datasheet(1/4 Pages) FS

部件名	FDR1020E

功能描述	SCHOTTKY BARRIER DIODE

PDF	4 Pages

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制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

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2016. 4. 23

1/4

SEMICONDUCTOR

TECHNICAL DATA

FDR1020E

Revision No : 0

SCHOTTKY BARRIER DIODE

FEATURES

MARKING:

The marking bar indicates the cathode

SOD-523



Low Forward Voltage Drop



Surface Mount Package Ideally Suited For Automatic Insertion

L6

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

a

r

a

P

l

o

b

m

y

S

mete

t

i

m

i

L

r

Unit

VRRM

Repetitive Peak Reverse Voltage

20

V

VRWM

Working Peak Reverse Voltage

VR

DC Blocking Voltage

VR(RMS)

RMS Reverse Voltage

14

V

IFM

Forward Continuous Current

1.0

A

IFSM

Non-repetitivePeak Forward Surge Current @t=8.3ms

4

A

PD

Power Dissipation

150

mW

RθJA

Thermal Resistance from Junction to Ambient

667

℃/W

Junction temperature

125

℃

Tstg

Storage Temperature

-55 ~ +150

℃

ELECTRICAL CHARACTERISTICS (Ta = 25

° unless otherwise specified)

Parameter

Symbol

Test

Condition

Min

Typ

Max

Unit

Reverse breakdown voltage

V(BR)

IR=250

μA

V

Reverse current

IR

VR=10

μA

Forward voltage

VF

100

20

V

VR=20V

μA

IF=10mA

IF=100mA

Capacitance between terminals

CT

VR= 0V,f=1MHz

IF=1A

V

0.23

0.305

0.50

80

pF

120

Tj

类似零件编号 - FDR1020E

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FDR1040DFN1006	322Kb / 5P	Schottky Barrier Diode

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