FDS16ST3G datasheet(1/3 Pages) FS

部件名	FDS16ST3G

功能描述	Switching Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

标志

1 / 3 page

Switching Diode

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Reverse Voltage

V R

75

Vdc

Peak Forward Current

I

F

200

mAdc

Peak Forward Surge Current

I FM(surge)

500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

8

.

1

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

P

n

o

i

t

a

p

i

s

i

D

e

c

i

v

e

D

l

a

t

o

T

D

300

mW

Alumina Substrate, (2) TA = 25°C

4

.

2

C

°

5

2

e

v

o

b

a

e

t

a

r

e

D

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

I

t

n

e

r

u

C

e

g

a

k

a

e

L

e

g

a

t

l

o

V

e

s

r

e

v

e

R

µAdc

(V R

0

.

1

—

)

c

d

V

5

7

=

(V R = 75 Vdc, T J

0

5

—

)

C

°

0

5

1

=

(V R = 25 Vdc, T J

0

3

—

)

C

°

0

5

1

=

Reverse Breakdown Voltage

V (BR)

75

—

Vdc

(I BR = 100

µAdc)

V

e

g

a

t

l

o

V

d

r

a

w

r

o

F

mV

(I F

5

1

7

—

)

c

d

A

m

0

.

1

=

(I F

5

8

—

)

c

d

A

m

0

1

=

(I F

0

1

—

)

c

d

A

m

0

5

=

(I F

0

5

2

1

—

)

c

d

A

m

0

5

1

=

Diode Capacitance

C D

—

2.0

pF

(V R = 0, f = 1.0 MHz)

Forward Recovery Voltage

V FR

–-

1.75

Vdc

(I F = 10 mAdc, t r = 20ns )

Reverse Recovery Time

t rr

—

6.0

ns

(I F = I R = 10 mAdc, R L = 50 Ω)

Stored Charge

Q S

—

45

pC

(I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3

CATHODE

1

ANODE

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

FDS16ST1G

A6

SOT-23

3000/Tape&Reel

FDS16ST3G

A6

SOT-23

10000/Tape&Reel

SEMICONDUCTOR

TECHNICAL DATA

FDS16S

2009. 5. 28

1/3

Revision No : 0

SOT –23

1

3

2

类似零件编号 - FDS16ST3G

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FDS160	72Kb / 3P	Switching diode
	FDS160E	133Kb / 3P	Switching diode
	FDS160ET1G	133Kb / 3P	Switching diode
	FDS160F	372Kb / 3P	Switchingdiode
	FDS160G	486Kb / 4P	High Speed Switching Diode

More results

类似说明 - FDS16ST3G

制造商	部件名	数据表	功能描述
ON Semiconductor	BAS16HT1	45Kb / 4P	Switching Diode March, 2005 ??Rev. 4
Microsemi Corporation	1N4531	96Kb / 1P	SWITCHING DIODE
Microsemi Corporation	1N5196	82Kb / 1P	SWITCHING DIODE
TRANSYS Electronics Lim...	BAL99LT1	60Kb / 1P	SWITCHING DIODE
ON Semiconductor	MMSD4148T1	75Kb / 4P	Switching Diode September, 2007 - Rev. 9
TAITRON Components Inco...	1N914	174Kb / 4P	Switching Diode
AiT Semiconductor Inc.	BAS516	210Kb / 4P	SWITCHING DIODE HIGH SPEED SWITCHING DIODE REV1.0
	BAV99L	442Kb / 5P	SWITCHING DIODE DUAL SWITCHING DIODE REV2.0
	MBD914	505Kb / 5P	SWITCHING DIODE HIGH?뭆PEED SWITCHING DIODE REV1.0
	MDL914	483Kb / 5P	SWITCHING DIODE HIGH ?밪PEED SWITCHING DIODE REV1.1