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FDS70S 数据表(PDF) 1 Page - First Silicon Co., Ltd |
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FDS70S 数据表(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 3 page ![]() MAXIMUM RATINGS (TA= 25°C) l o b m y S g n i t a R Max Unit V e g a t l o V e s r e v e R R 70 Vdc I t n e r r u C d r a w r o F F 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMALCHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C 8 . 1 C ° 5 2 e v o b a e t a r e D mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate(2) TA = 25°C 4 . 2 C ° 5 2 e v o b a e t a r e D mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICEMARKING FDS70ST1G = A4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFFCHARACTERISTICS V e g a t l o V n w o d k a e r B e s r e v e R (BR) 70 — Vdc (I (BR) = 100 µAdc) I t n e r r u C e g a k a e L e g a t l o V e s r e v e R R µAdc (VR = 25 Vdc,TJ 0 6 — ) C ° 0 5 1 = (VR 5 . 2 — ) c d V 0 7 = (VR = 70 Vdc,TJ 0 0 1 — ) C ° 0 5 1 = Diode Capacitance C D — 1.5 pF (VR = 0, f = 1.0 MHz) V e g a t l o V d r a w r o F F mVdc (IF 5 1 7 — ) c d A m 0 . 1 = (IF 5 5 8 — ) c d A m 0 1 = (IF 0 0 0 1 — ) c d A m 0 5 = (IF 0 5 2 1 — ) c d A m 0 5 1 = Reverse Recovery Time RL=100Ω trr — 6.0 ns (IF= IR=10 mAdc, VR=5.0Vdc, IR(REC)= 1.0 mAdc) (Figure 1) 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. Monolithic Dual Switching Diode Common Cathode 3 CATHODE 1 ANODE 2 ANODE Device Marking Shipping FDS70ST1G FDS70ST3G A4 3000 Tape & Reel 10000 Tape & Reel ORDERING INFORMATION A4 • We declare that the material of product compliance with RoHS requirements. • We declare that the material of product compliance with RoHS requirements. FETURE SOT –23 1 3 2 SEMICONDUCTOR TECHNICAL DATA FDS70S 2010. 5. 10 1/3 Revision No : 0 |
类似零件编号 - FDS70S |
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类似说明 - FDS70S |
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