WNSC201200W datasheet(3/11 Pages) WEEN

3 / 11 page

WeEn Semiconductors

WNSC201200W

Silicon Carbide Diode

WNSC201200W

Product data sheet

All information provided in this document is subject to legal disclaimers.

2 July 2019

3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

VRRM

repetitive peak reverse

voltage

1200

VRWM

crest working reverse

voltage

1200

reverse voltage

1200

IF(AV)

average forward current

δ = 0.5 ; square-wave pulse; Tmb ≤ 131 °C;

Fig. 1; Fig. 2; Fig. 3; Fig. 4

IFRM

repetitive peak forward

current

δ = 0.5 ; tp = 25 μs; Tmb ≤ 131 °C;

square-wave pulse

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse

220

tp = 10 μs; Tj(init) = 25 °C; sine-wave pulse

1440

I2t

I2t for fusing

sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms

242

A2s

Tstg

storage temperature

-55 to 175

°C

junction temperature

175

°C

IF(AV) (A)

Ptot

(W)

ajf15-001

175

130.2

141.4

152.6

163.8

Tmb(max)

(°C)

119

δ = 1

0.5

0.2

0.1

Vo = 0.687V

Rs = 0.0608

-50

050

100

150

200

Tmb (°C)

IF(AV)

(A)

ajf15-002

131 °C

IF(AV) = IF(RMS) × √δ

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

typical values

Fig. 2. Forward current as a function of mounting

base temperature; typical values

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