FDR521LP datasheet(1/3 Pages) FS

部件名	FDR521LP

功能描述	Schottky Barrier Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

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1 / 3 page

SEMICONDUCTOR

TECHNICAL DATA

FDR521LP

2014. 02. 13

1/3

Revision No : 0

Schottky Barrier Diode

Absolute Maximum Ratings (TA=25℃ unless otherwise specified)

Symbol

Parameter

Value

Unit

VR

Reverse Voltage (DC)

30

V

IO

Average Rectified Forward Current

100

mA

IFSM

Forward Current SurgePeak (60Hz/1cyc)

500

mA

JunctionTemperature

150

Storage Temperature

-40-+150

Electrical Characteristics (TA=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Forward Voltage

VF

IF = 10mA

-

0.35

V

Reverse Leakage Current

IR

VR = 10V

10

uA

Features

Ultra Small Power Mold Type

Low IR

High Reliability

Low Current Rectification

Mechanical Data

Case Material: Molded Plastic,"Green" Molding Compound.

UL FlammabilityClassificationRating 94V-0

Moisture Sensitivity:Level 1 per J-STD-020

Terminal Connections:Cathode Dot

Terminals: Finish -NiPdAu annealed over Copperleadframe

Solderable per MIL-STD-202, Method 208

Weight: 0.001grams (approximate)

Applications

Mobile Handsets

MP3 Players

Digital Camera and Camcorders

NotebookPCs & PDAs

GPS

CASE: DFN1006-2

Thermal Characteristics

Symbol

Parameter

Value

Unit

RθJA

Thermal Resistance,Junctionto AmbientAir

400

°C/W

TJ

°C

TSTG

°C

类似零件编号 - FDR521LP

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FDR521-0603	643Kb / 4P	SCHOTTKY BARRIER DIODE
	FDR521-1006	472Kb / 3P	Schottky Barrier Diode
	FDR521E	322Kb / 3P	SCHOTTKYBARRIERDIODE
	FDR521F	339Kb / 4P	SCHOTTKY BARRIER DIODE
	FDR521G	335Kb / 4P	SCHOTTKYBARRIERDIODE

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