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STM32L433CB 数据表(PDF) 97 Page - STMicroelectronics |
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STM32L433CB 数据表(HTML) 97 Page - STMicroelectronics |
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97 / 225 page  DS11449 Rev 5 97/225 STM32L433xx Electrical characteristics 193 Vhyst_BOR_PVD Hysteresis voltage of BORH (except BORH0) and PVD -- 100 - mV IDD (BOR_PVD)(2) BOR(3) (except BOR0) and PVD consumption from VDD -- 1.1 1.6 µA VPVM1 VDDUSB peripheral voltage monitoring - 1.18 1.22 1.26 V VPVM3 VDDA peripheral voltage monitoring Rising edge 1.61 1.65 1.69 V Falling edge 1.6 1.64 1.68 VPVM4 VDDA peripheral voltage monitoring Rising edge 1.78 1.82 1.86 V Falling edge 1.77 1.81 1.85 Vhyst_PVM3 PVM3 hysteresis - - 10 - mV Vhyst_PVM4 PVM4 hysteresis - - 10 - mV IDD (PVM1) (2) PVM1 consumption from VDD -- 0.2 - µA IDD (PVM3/PVM4) (2) PVM3 and PVM4 consumption from VDD -- 2 - µA 1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes. 2. Guaranteed by design. 3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply current characteristics tables. Table 24. Embedded reset and power control block characteristics (continued) Symbol Parameter Conditions(1) Min Typ Max Unit |
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