FDS7000 datasheet(1/3 Pages) FS

部件名	FDS7000

功能描述	Dual Switching Diode

PDF	3 Pages

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制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

标志

1 / 3 page

MAXIMUM RATINGS(EACH DIODE)

Rating

Symbol

Va l u e

Unit

Reverse Voltage

V R

100

Vdc

Forward Current

I F

200

mAdc

Peak Forward Surge Current

I

FM(surge)

500

mAdc

THERMALCHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board (1)

P D

225

mW

T A = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

556

°C/W

Total Device Dissipation

P D

300

mW

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

DEVICEMARKING

FDS7000 = M5C

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted)(EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

OFFCHARACTERISTICS

Reverse Breakdown Voltage

V (BR)

100

—

Vdc

(I (BR) = 100 µAdc)

Reverse Voltage Leakage Current

µAdc

(V R = 50 Vdc)

I R

—

1.0

(V R = 100 Vdc)

I R2

—

3.0

(V R = 50 Vdc,125°C)

I R3

—

100

Forward Voltage

V F

Vdc

(I F = 1.0 mAdc)

0.55

0.7

(I F = 10 mAdc)

0.67

0.82

(I F = 100 mAdc)

0.75

1.1

Reverse Recovery Time

t rr

—

4.0

ns

(I F = I R = 10 mAdc) (Figure 1)

Capacitance(VR=0V)

C

—

1.5

pF

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Dual Switching Diode

3

CATHODE/ANODE

1

ANODE

2

CATHODE

Device

Package

Shipping

FDS7000

SOT–23

3000/Tape & Reel

ORDERING INFORMATION

FETURE

We declare that the material of product

compliance with RoHS requirements.

SEMICONDUCTOR

TECHNICAL DATA

FDS7000

2010. 09. 27

1/3

Revision No : 0

SOT –23

1

3

2

类似零件编号 - FDS7000

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDS7060N7	213Kb / 7P	30V N-Channel PowerTrench MOSFET
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	FDS7064N7	175Kb / 6P	30V N-Channel PowerTrench MOSFET
	FDS7064SN3	195Kb / 7P	30V N-Channel PowerTrench SyncFET

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