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FFB2222AD 数据表(PDF) 3 Page - First Silicon Co., Ltd |
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FFB2222AD 数据表(HTML) 3 Page - First Silicon Co., Ltd |
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3 / 7 page ![]() 2014. 03. 10 3/7 FFB2222AD Revision No : 0 SMALL –SIGNAL CHARACTERISTICS Current – Gain – Bandwidth Product (Note 3) (IC = 20 mAdc, VCE= 20 Vdc, f = 100 MHz) fT 300 – MHz Output Capacitance (VCB = 10 Vdc, IE= 0, f = 1.0 MHz) Cobo – 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC= 0, f = 1.0 MHz) Cibo – 25 pF Input Impedance (IC = 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz) hie 2.0 0.25 8.0 1.25 kΩ Voltage Feedback Ratio (IC = 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz) hre – – 8.0 4.0 X 10–4 Small–Signal Current Gain (IC = 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz) hfe 50 75 300 375 – Output Admittance (IC = 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE= 10 Vdc, f = 1.0 kHz) hoe 5.0 25 35 200 mhos Collector Base Time Constant (IE = 20 mAdc, VCB= 20 Vdc, f = 31.8 MHz) rb, Cc – 150 ps Noise Figure (IC = 100 Adc, VCE = 10 Vdc, RS= 1.0㏀ , f = 1.0 kHz) NF – 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = 30 Vdc, VBE(off) = –0.5 Vdc, td – 10 ns Rise Time (VCC V IC = 150 mAdc, IB1= 15 mAdc) tr – 25 ns Storage Time (VCC = 30 Vdc, IC= 150 mAdc, ts – 225 ns Fall Time (VCC IB1 = IB2= 15 mAdc) tf – 60 ns 3. fT is defined as the frequency at which hfe extrapolates to unity. |
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