CSB1370 datasheet(1/3 Pages) CDIL

部件名	CSB1370

功能描述	PNP SILICON EPITAXIAL POWER TRANSISTOR

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON EPITAXIAL POWER TRANSISTOR

CSB1370

(9AW)

TO-220

MARKING : AS BELOW

Designed For AF Power Amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

60

V

Collector -Emitter Voltage

VCEO

60

V

Emitter- Base Voltage

VEBO

5.0

V

Collector Current

IC

3.0

A

Peak

ICP

6.0

A

Power Dissipation @ Ta=25 deg C

PC

2.0

W

Power Dissipation @ Tc=25 deg C

30

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

60

-

V

Collector Base Voltage

VCBO

IC=50uA, IE=0

60

-

V

Emitter Base Voltage

VEBO

IE=50uA,IC=0

5.0

-

V

Collector Cut off Current

ICBO

VCB=60V, IE=0

-

10

uA

Emitter Cut off Current

IEBO

VEB=4V,IC=0

-

10

uA

Collector Emitter Saturation Voltage

VCE(Sat)

IC=2A,IB=0.2A

-

1.5

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=2A, IB=0.2A

-

1.5

V

DC Current Gain

hFE

IC=0.5A, VCE=5V

60

-

320

Dynamic Characteristics

Transition Frequency

ft

VCE=5V,IC=0.5A,

-

15

-

MHz

f=5MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0

-

80

-

pF

f=1MHz

hFE CLASSIFICATION:-

D : 60 -120;

E : 100 -200

F : 160 -320

MARKING :

CSB

1370

DE

F

IS / IECQC 700000

IS / IECQC 750100

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

Data Sheet

Page 1 of 3

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