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ISCNH155D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCNH155D
功能描述  isc N-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCNH155D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH155D
·
FEATURES
·
Drain Source Voltage-
: VDSS= 700V(Min)
·
Low On-Resistance
: RDS(on) = 600mΩ(Max)
·
100% Avalanche Tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Power supply
·
DC-DC converters
·
Motor control
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
700
V
VGSS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Pulsed
48
A
PD
Total Dissipation
100
W
Tj
Operating Junction Temperature
-50~150
℃
Tstg
Storage Temperature
-50~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
1.25
℃
/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= 0.25mA
700
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
3
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=6A
390
mΩ
IGSS
Gate-Source Leakage Current
VGS=±20V;VDS= 0V
±
0.1
μ
A
IDSS
Drain-Source Leakage Current
VDS= 700V; VGS= 0V
100
μ
A
VSD
Diode forward voltage
IS=6A, VGS = 0 V
1.2
V


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