A63P7336

128K X 36 Bit Synchronous High Speed SRAM with

Preliminary

Burst Counter and Pipelined Data Output

PRELIMINARY

(July, 2005, Version 0.0)

1

AMIC Technology, Corp.

Features

Fast access times: 2.6/2.8/3.2/3.5/3.8/4.2 ns

Single +2.5V+10% or +2.5V-5% power supply

Synchronous burst function

Individual Byte Write control and Global Write

Registered output for pipelined applications

Three separate chip enables allow wide range of

options for CE control, address pipelining

Selectable BURST mode

SLEEP mode (ZZ pin) provided

Available in 100-pin LQFP package

General Description

The A63P7336 is a high-speed SRAM containing 4.5M

bits of bit synchronous memory, organized as 128K words

by 36 bits.

The

A63P7336

combines

advanced

synchronous

peripheral circuitry, 2-bit burst control, input registers,

output registers and a 128KX36 SRAM core to provide a

wide range of data RAM applications.

The positive edge triggered single clock input (CLK)

controls all synchronous inputs passing through the

registers. Synchronous inputs include all addresses (A0 -

(

CE ), two additional chip enables (CE2, CE2 ), burst

control inputs ( ADSC , ADSP , ADV ), byte write enables

( BWE , BW1 , BW2 , BW3 , BW4 ) and Global Write

( GW ). Asynchronous inputs include output enable ( OE ),

clock (CLK), BURST mode (MODE) and SLEEP mode

(ZZ).

Burst operations can be initiated with either the address

status processor ( ADSP ) or address status controller

( ADSC ) input pin. Subsequent burst sequence burst

addresses can be internally generated by the A63P7336

and controlled by the burst advance ( ADV ) pin. Write

cycles are internally self-timed and synchronous with the

rising edge of the clock (CLK).

This feature simplifies the write interface. Individual Byte

enables allow individual bytes to be written. BW1 controls

condition that BWE is LOW. GW LOW causes all bytes

to be written.