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STTH20002TV 数据表(PDF) 2 Page - STMicroelectronics

部件名 STTH20002TV
功能描述  TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH20002TV 数据表(HTML) 2 Page - STMicroelectronics

  STTH20002TV Datasheet HTML 1Page - STMicroelectronics STTH20002TV Datasheet HTML 2Page - STMicroelectronics STTH20002TV Datasheet HTML 3Page - STMicroelectronics STTH20002TV Datasheet HTML 4Page - STMicroelectronics STTH20002TV Datasheet HTML 5Page - STMicroelectronics  
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STTH20002TV
2/5
®
THERMAL RESISTANCE
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test:
* tp = 5 ms,
δ < 2%
** tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.002 IF
2
(RMS)
DYNAMIC CHARACTERISTICS (per diode)
Symbol
Parameter
Maximum
Unit
Rth(j-c)
Junction to case
Per diode
0.52
°C/W
Total
0.31
Rth(c)
Coupling
0.1
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR *
Reverse leakage current Tj = 25°C
VR = VRRM
100
µA
Tj = 125°C
80
800
VF **
Forward voltage drop
Tj = 25°C
IF = 100A
1.05
V
IF = 200A
1.20
Tj = 150°C
IF = 100A
0.75
0.85
IF = 200A
1.05
Symbol
Parameter
Test conditions
Min.
Typ Max.
Unit
trr
Reverse recovery
time
Tj = 25°C
IF = 1A dIF/dt = 200 A/µs
VR =30V
41
50
ns
IRM
Reverse recovery
current
Tj = 125°C IF = 100A
VR = 160V
dIF/dt = 200 A/µs
11.5
15
A
tfr
Forward recovery
time
Tj = 25°C IF = 100A
dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
800
ns
VFP
Forward recovery
voltage
Tj = 25°C IF = 100A
dIF/dt = 200 A/µs
2.5
V



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