ES2DP datasheet(3/14 Pages) NEXPERIA

3 / 14 page

Nexperia

ES2DP

200 V, 2 A hyperfast PN-rectifier

ES2DP

All information provided in this document is subject to legal disclaimers.

Product data sheet

25 August 2017

3 / 14

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

200

reverse voltage

200

VRMS

RMS voltage

Tj = 25 °C

140

forward current

δ = 1 ; Tsp ≤ 125 °C

2.8

IF(AV)

average forward current δ = 0.5 ; f = 20 kHz; square wave; Tsp ≤

130 °C

IFSM

non-repetitive peak

forward current

tp = 8.3 ms; Tj(init) = 25 °C; single half sine

wave (applied at rated load condition)

[1]

835

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

1.316

junction temperature

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

150

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[2]

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

[3]

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Soldering point of cathode tab.

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