Nexperia

PRMH2

50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

-

-

1

µA

collector-emitter cut-off

current

-

-

5

µA

collector-base cut-off

current

-

-

100

nA

emitter-base cut-off

current

-

-

90

µA

DC current gain

80

-

-

collector-emitter

saturation voltage

-

-

150

mV

off-state input voltage

-

1.2

0.8

V

on-state input voltage

3

1.6

-

V

R1

bias resistor 1

[1]

33

47

61

kΩ

R2/R1

bias resistor ratio

[1]

0.8

1

1.2

collector capacitance

-

-

2.5

pF

transition frequency

[2]

-

230

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

10

1

006aac752

10

1

(1)

(2)

(3)

Fig. 3. DC current gain as a function of collector

current; typical values

0

5

4

2

3

1

aaa-018667

0.04

0.06

0.02

0.08

0.1

(A)

0

0.12 mA

0.18 mA

0.24 mA

0.30 mA

0.36 mA

0.60 mA

0.42 mA

0.48 mA

0.54 mA

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values

PRMH2

All information provided in this document is subject to legal disclaimers.

Product data sheet

14 September 2018

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