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PEMI8CSP/RT/P 数据表(PDF) 5 Page - Nexperia B.V. All rights reserved |
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PEMI8CSP/RT/P 数据表(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 17 page ![]() PEMIXCSP_FAM All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 — 27 January 2012 4 of 16 NXP Semiconductors PEMIxCSP family 4-, 6- and 8-channel passive filter network with ESD protection 5. Limiting values [1] Device is qualified with 1000 pulses of 15 kV contact discharges each, according to the IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge). 6. Characteristics [1] Guaranteed by design. [2] According to IEC 61000-4-5 and IEC 61000-4-9. Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +5.6 V VESD electrostatic discharge voltage all pins to ground [1] contact discharge - 20 kV air discharge - 30 kV IEC 61000-4-2, level 4 all pins to ground contact discharge - 8kV air discharge - 15 kV Ich channel current (DC) Tamb =70 C- 33 mA Pch channel power dissipation continuous power; Tamb =70 C -60 mW Ptot total power dissipation continuous power; Tamb =70 C -250 mW Tstg storage temperature 55 +150 C Tamb ambient temperature 40 +85 C Table 4. Channel characteristics Tamb =25 C; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Rs(ch) channel series resistance 80 100 120 Cch channel capacitance for the total channel; f = 100 kHz [1] PEMIxCSP/RT Vbias(DC) = 0 V 334149pF Vbias(DC) =2.5 V - 23 - pF PEMIxCSP/RW Vbias(DC) = 0 V 435465pF Vbias(DC) =2.5 V - 30 - pF VBR breakdown voltage positive clamp; II =1mA 5.8 - 9 V VF forward voltage negative clamp; IF =1mA 1.5 - 0.4 V ILR reverse leakage current per channel; VI = 3.5 V - - 0.1 A Rdyn dynamic resistance I = 1 A [2] positive transient - 0.3 - negative transient - 0.85 - |
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