PMF63UNE datasheet(4/15 Pages) NEXPERIA

4 / 15 page

Nexperia

PMF63UNE

20 V, N-channel Trench MOSFET

PMF63UNE

All information provided in this document is subject to legal disclaimers.

Product data sheet

20 April 2016

4 / 15

aaa-022560

VDS (V)

10-1

102

10-1

(A)

10-2

Limit RDSon = VDS/ID

DC; Tsp = 25 °C

DC; Tamb = 25 °C; 6 cm2

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

363

418

K/W

in free air

[2]

276

317

K/W

Rth(j-a)

thermal resistance

from junction to

ambient

in free air; t ≤ 5 s

[2]

238

273

K/W

Rth(j-sp)

thermal resistance

from junction to solder

point

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.

PMF63UNE 数据表(PDF) 4 Page - Nexperia B.V. All rights reserved

PMF63UNE 数据表(HTML) 4 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表下载