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PUSB2X4DH 数据表(PDF) 4 Page - Nexperia B.V. All rights reserved |
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PUSB2X4DH 数据表(HTML) 4 Page - Nexperia B.V. All rights reserved |
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4 / 12 page ![]() PUSB2X4D All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 1 — 5 November 2013 3 of 11 NXP Semiconductors PUSB2X4D ESD protection for high-speed interfaces 6. Characteristics [1] This parameter is guaranteed by design. [2] According to IEC 61000-4-5 (8/20 s current waveform). [3] 100 ns Transmission Line Pulse (TLP); 50 ; pulser at 80 ns. Table 5. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VBR breakdown voltage II = 1 mA 6- 9V IRM reverse leakage current per channel; VI = 5 V --1 A VF forward voltage II = 1 mA -0.7 -V Cline line capacitance f = 1 MHz [1] VI =0 V - 0.7 0.85 pF VI =2.5 V - 0.6 0.75 pF C line line capacitance difference f=1MHz; VI =2.5 V [1] --0.1 pF rdyn dynamic resistance surge [2] positive transient - 0.41 - negative transient - 0.34 - TLP [3] positive transient - 0.48 - negative transient - 0.34 - VCL clamping voltage positive transient [2] IPP =4.8 A - 4.3 - V negative transient IPP = 5.2 A - 2.7 - V |
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