PUSB3AB6

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 1 — 3 March 2015

3 of 12

NXP Semiconductors

PUSB3AB6

ESD protection for ultra high-speed interfaces

5.

Limiting values

[1]

All pins to ground.

6.

Characteristics

[1]

This parameter is guaranteed by design.

[2]

[3]

100 ns Transmission Line Pulse (TLP); 50

; pulser at 80 ns.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

input voltage

3.3

+3.3

V

electrostatic discharge

voltage

IEC 61000-4-2, level 4

[1]

contact discharge

15

+15

kV

air discharge

15

+15

kV

rated peak pulse current

7+7

A

ambient temperature

40

+85

C

storage temperature

55

+125

C

Table 5.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

breakdown voltage

6

--V

-

1

100

nA

line capacitance

[1] -

0.15

0.20

pF

dynamic resistance

TLP

[3]

positive transient

-

0.4

-



negative transient

-

0.4

-



snapback voltage

-

3

-

V

clamping voltage

[2] -6

-V

negative transient

[2] -

6-

V