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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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CMBT6520 数据表(PDF) 1 Page - Continental Device India Limited |
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CMBT6520 数据表(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  Continental Device India Limited Data Sheet Page 1 of 3 HIGH–VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT6520 = 2Z ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) –VCBO max. 350 V Collector–emitter voltage (open base) –VCEO max. 350 V Emitter–base voltage (open collector) –VEBO max. 5 V Collector current (d.c.) –IC max. 500 mA Total power dissipation at Tamb = 25°C Ptot max 225 mW D.C. current gain –IC = 10 mA; –VCE = 10 V hFE min. 30 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –VCBO max. 350 V Collector–emitter voltage (open base) –VCEO max. 350 V Emitter–base voltage (open collector) –VEBO max. 5 V Collector current (d.c.) –IC max. 500 mA Total power dissipation at Tamb = 25°C Ptot max 225 mW Storage temperature Tstg –55 to +150 °C Junction temperature Tj max. 150 °C CMBT 6520 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 2 1 SOT-23 Formed SMD Package Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company |
类似零件编号 - CMBT6520 |
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类似说明 - CMBT6520 |
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