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PEMB13 数据表(PDF) 2 Page - NXP Semiconductors |
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PEMB13 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 2004 Apr 15 2 Philips Semiconductors Product specification PNP/PNP resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 47 kΩ PEMB13; PUMB13 FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • Low current peripheral drivers • Replacement of general purpose transistors in digital applications • Control of IC inputs. DESCRIPTION PNP/PNP resistor-equipped transistors (see “Simplified outline, symbol and pinning” for package details). QUICK REFERENCE DATA SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage −−50 V IO output current (DC) −−100 mA TR1 PNP −−− TR2 PNP −−− R1 bias resistor 4.7 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PACKAGE MARKING CODE NPN/PNP COMPLEMENT NPN/NPN COMPLEMENT PHILIPS EIAJ PEMB13 SOT666 − 45 PEMD13 PEMH13 PUMB13 SOT363 SC-88 B*5 PUMD13 PUMH13 TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PINNING PIN DESCRIPTION PEMB13 1 emitter TR1 PUMB13 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 MAM477 12 3 4 6 5 Top view 65 4 12 3 R2 TR1 TR2 R1 R1 R2 |
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