STS1C1S250

2/10

THERMAL DATA

(2) Mounted on 0.5 in² pad of 2oz. copper.

OFF

ON (1)

DYNAMIC

(3) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Rthj-amb (2)

Thermal Resistance Junction-ambient Max (Single Operating)

(Dual Operating)

62.5

78

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source

Breakdown Voltage

N-CHANNEL

P-CHANNEL

n-ch

p-ch

250

250

V

V

Zero Gate Voltage

n-ch

p-ch

n-ch

p-ch

1

1

10

10

µA

µA

µA

µA

Gate-body Leakage

n-ch

p-ch

±10

±10

µA

µA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate Threshold Voltage

N-CHANNEL

P-CHANNEL

n-ch

p-ch

2

2

3

3

4

4

V

V

Static Drain-source On

Resistance

N-CHANNEL

P-CHANNEL

n-ch

p-ch

0.9

2.1

1.4

2.8

Ω

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Input Capacitance

N-CHANNEL

P-CHANNEL

n-ch

p-ch

325

260

pF

pF

Output Capacitance

n-ch

p-ch

51

52

pF

pF

Reverse Transfer

Capacitance

n-ch

p-ch

24

25.5

pF

pF

Gate Input Resistance

f=1 MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

n-ch

p-ch

6

6

Ω

Ω