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SS12F 数据表(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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SS12F 数据表(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 3 page ![]() SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER DN:T19702A0 https://www.microdiode.com Rev:2019A0 Page :1 SS12F THRU SS1200F Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 °C/10 seconds at terminals Dimensions in inches and (millimeters) Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere SMAF 0.193(4.90) 0.173(4.40) 0.047(1.20) 0.031(0.80) 0.008(0.20) 0.005(0.12) 0.047(1.20) 0.035(0.90) 0.146(3.70) 0.130(3.30) 0.063 (1.60) 0.051 (1.30) 0.106(2.70) 0.094(2.40) Mechanical Data Case : JEDEC SMAF molded plastic body Terminals : Solderable per MIL-STD-750,Method 2026 Polarity : Color band denotes cathode end Mounting Position : Any Weight : 0.0018 ounce, 0.064 grams Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Maximum Ratings And Electrical Characteristics Parameter SYMBOLS SS12F SS13F SS14F SS15F SS16F SS18F SS110F SS1150F SS1200F UNITS Marking Code MDD SS12F MDD SS13F MDD SS14F MDD SS15F MDD SS16F MDD SS18F MDD SS110F MDD SS1150F MDD SS1200F Maximum repetitive peak reverse voltage VRMM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum average forward rectified current at TL(see fig.1) I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30 A Maximum instantaneous forward voltage at 1.0A VF 0.55 0.70 0.85 0.95 V Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 0.5 0.2 mA 10.0 5.0 2.0 Typical junction capacitance (NOTE 1) CJ 110 90 pF Typical thermal resistance (NOTE 2) RJA 88.0 ℃/ W Operating junction temperature range TJ -55 to +125 ℃ Storage temperature range TSTG -55 to +150 ℃ Note: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0x2.0”(5.0x5.0cm) copper pad areas. 3.The typical data above is for reference only. |
类似零件编号 - SS12F |
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类似说明 - SS12F |
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