FTC2412K-R datasheet(1/3 Pages) FS

部件名	FTC2412K-R

功能描述	General Purpose Transistors NPN Silicon

PDF	3 Pages

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制造商	FS [First Silicon Co., Ltd]

网页	http://www.firstsilicon.co.kr/

标志

1 / 3 page

General Purpose Transistors

NPN Silicon

SOT– 23

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

VCEO

50

Collector–Base Voltage

VCBO

60

Emitter–Base Voltage

VEBO

7.0

Collector Current — Continuous

IC

150

Collector power dissipation

PC

0.2

Junction temperature

Tj

150

Storage temperature

Tstg

-55 ~ +150

ELECTRICAL CHARACTERISTICS (T

A = 25 C unless otherwise noted.)

Max

Typ

Min

Symbol

Characteristic

Unit

Collector–Emitter Breakdown Voltage

V(BR)CEO

(IC = 1 mA)

Emitter–Base Breakdown Voltage

V(BR)EBO

(IE = 50 µA)

Collector–Base Breakdown Voltage

V(BR)CBO

(IC = 50 µA)

Collector Cutoff Current

ICBO

(VCB = 60 V)

Emitter cutoff current

IEBO

(VEB = 7 V)

Collector-emitter saturation voltage

VCE(sat)

(IC/ IB = 50 mA / 5m A)

hFE

DC current transfer ratio h FE

(VCE = 6 V, IC = 1mA)

Transition frequency

fT

(VCE = 12 V, IE = – 2mA, f =30MHz )

Output capacitance

Cob

(VCB = 12 V, IE = 0A, f =1MHz )

hFE values are classified as follows:

hEF

2

EMITTER

3

COLLECTOR

1

BASE

*

•

Device

FTC2412K-Q

BR

G1F

3000 Tape & Reel

ORDERING INFORMATION

FTC2412K-R

FTC2412K-S

BQ

We declare that the material of product compliance with RoHS requirements.

2010. 01. 18

1/3

SEMICONDUCTOR

TECHNICAL DATA

FTC2412K

Revision No : 1

1

3

2

Marking

Shipping

Symbol

Value

Unit

V

mAdc

W

C

50

7

60

-

120

-

180

2.0

-

0.1

0.4

560

-

3.5

V

μA

V

-

MHz

pF

120~270

180~390

270~560

Q

R

S

类似零件编号 - FTC2412K-R

制造商	部件名	数据表	功能描述
First Silicon Co., Ltd	FTC2411K	67Kb / 4P	Medium Power Transistor NPN silicon
	FTC2411K-Q	67Kb / 4P	Medium Power Transistor NPN silicon
	FTC2411K-R	67Kb / 4P	Medium Power Transistor NPN silicon

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