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ISCNL181D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCNL181D
功能描述  isc N-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCNL181D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCNL181D Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCNL181D Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNL181D
·
FEATURES
·
Static drain-source on-resistance:
RDS(on)≤6mΩ
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
·
Power switching application
·
Hard switched and high frequency circuits
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±
12
V
ID
Drain Current-Continuous
60
A
IDM
Drain Current-Single Pulsed
210
A
PD
Total Dissipation @TC=25℃
60
W
Tj
Tstg
Operating Junction And Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Channel-to-case thermal resistance
2.1
℃
/W
·
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= 250µA
20
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 250µA
0.5
1.0
V
RDS(on)
Drain-Source On-Resistance
VGS= 4.5V; ID= 20A
6
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±12V
±100
nA
IDSS
Drain-Source Leakage Current
VDS= 20V; VGS= 0V
1
µA
VSD
Diode forward voltage
IS= 10A, VGS = 0V
1.2
V
1
3
2


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