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STM32MP151AAB3 数据表(PDF) 142 Page - STMicroelectronics |
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STM32MP151AAB3 数据表(HTML) 142 Page - STMicroelectronics |
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142 / 253 page  Electrical characteristics STM32MP151A/D 142/253 DS12500 Rev 3 All timings are derived from tests performed under ambient temperature and VDD = 3.3 V. Table 26. Low-power mode wakeup timings Symbol Parameter System mode Conditions (after wakeup) Typ(1) Max( 1) Unit MPU wakeup tWUCSLEEP_M PU MPU wakeup from CSleep, MCU in CSleep Run HSE 24 MHz, SYSRAM 31 32 mpuss_ ck clock cycles tWUCSTOP_MP U MPU wakeup from CStop, MCU in CStop Stop HSI 64 MHz, SYSRAM 5.7 9 µs HSE + PLL 648 MHz, SYSRAM 112 220 MPU wakeup from CStop, MCU in CRun Run HSI 64 MHz, SYSRAM 0.54 1 HSE + PLL 648 MHz, SYSRAM 0.083 0.17 tWULPLV- Stop_MPU MPU wakeup from CStop with system in LPLV-Stop (LVDS=1), MCU in CStop LPLV- Stop HSI 64 MHz, SYSRAM 410 640 MCU wakeup tWUCSLEEP_M CU MCU wakeup from CSleep, MPU in CSleep Run HSE 24 MHz, SRAM 6 7 mcu_ck clock cycles tWULPLV- Stop_MCU MCU wakeup from CStop with system in LPLV-Stop (LVDS=1), MPU in CStop LPLV- Stop HSI 64 MHz, SRAM, MCTMPSKP = 1 5.3 8 µs HSI 64 MHz, SRAM, MCTMPSKP = 0, PWR_LP delay = 1 ms 1.4 2.2 ms tWUCSTOP_ MCU MCU wakeup from CStop, MPU in CStop Stop HSI 64 MHz, SRAM 5.3 8 µs tWUCSTOP_ MCU2 MCU wakeup from CStop, HSI active (HSIKERON=1), MPU in CStop Stop (HSI active) HSI 64 MHz, SRAM 0.33 0.5 tWUCSTOP_ MCU3 MCU wakeup from CStop, MPU in CRun Run HSI 64 MHz, SRAM 0.12 0.18 tWUSTANDBY_ MCU MCU wakeup from STANDBY Standby HSI 64 MHz, RETRAM 2550 3000 1. Guaranteed by characterization results unless otherwise specified. Table 27. Wakeup time using USART/LPUART(1) Symbol Parameter Conditions Typ Max Unit tWUUSART tWULPUART Wakeup time needed to calculate the maximum USART/LPUART baud rate allowing the wakeup from stop mode when USART/LPUART clock source is HSI. Stop - 6.7 µs LPLV-Stop - 240.7(2) µs 1. Guaranteed by design. |
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