STM32MP151AAB3 datasheet(175/253 Pages) STMICROELECTRONICS

175 / 253 page

DS12500 Rev 3

175/253

STM32MP151A/D

Electrical characteristics

232

Table 61. Asynchronous multiplexed PSRAM/NOR read timings(1)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

4Tfmc_ker_ck-0.5

4Tfmc_ker_ck+1

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

2Tfmc_ker_ck-0.5

2Tfmc_ker_ck+1

ttw(NOE)

FMC_NOE low time

Tfmc_ker_ck-0.5

Tfmc_ker_ck+0.5

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

Tfmc_ker_ck-1

tv(A_NE)

FMC_NEx low to FMC_A valid

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

0.5

1.5

tw(NADV)

FMC_NADV low time

Tfmc_ker_ck

Tfmc_ker_ck+1

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high

Tfmc_ker_ck-3

th(A_NOE)

Address hold time after FMC_NOE high

Address held

until next read

operation

tsu(Data_NE)

Data to FMC_NEx high setup time

Tfmc_ker_ck+15

tsu(Data_NOE)

Data to FMC_NOE high setup time

th(Data_NE)

Data hold time after FMC_NEx high

th(Data_NOE)

Data hold time after FMC_NOE high

1. Guaranteed by characterization results.

Table 62. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

7Tfmc_ker_ck-0.5

8Tfmc_ker_ck+1

tw(NOE)

FMC_NWE low time

5Tfmc_ker_ck-0.5

6Tfmc_ker_ck+1

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high

7Tfmc_ker_ck+2

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

5Tfmc_ker_ck

1. Guaranteed by characterization results.

STM32MP151AAB3 数据表(PDF) 175 Page - STMicroelectronics

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