STM32MP151AAB3 datasheet(173/253 Pages) STMICROELECTRONICS

173 / 253 page

DS12500 Rev 3

173/253

STM32MP151A/D

Electrical characteristics

232

Figure 26. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

NBL

Data

FMC_NEx

FMC_NBL[1:0]

FMC_D[15:0]

tv(BL_NE)

th(Data_NWE)

FMC_NOE

Address

FMC_A[25:0]

tv(A_NE)

tw(NWE)

FMC_NWE

tv(NWE_NE)

t h(NE_NWE)

th(A_NWE)

th(BL_NWE)

tv(Data_NE)

tw(NE)

MS32754V1

FMC_NADV (1)

t v(NADV_NE)

tw(NADV)

FMC_NWAIT

tsu(NWAIT_NE)

th(NE_NWAIT)

Table 59. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

4Tfmc_ker_ck-0.5 4Tfmc_ker_ck+1

tv(NWE_NE)

FMC_NEx low to FMC_NWE low

Tfmc_ker_ck-0.5

Tfmc_ker_ck+1

tw(NWE)

FMC_NWE low time

Tfmc_ker_ck-0.5 Tfmc_ker_ck+0.5

th(NE_NWE)

FMC_NWE high to FMC_NE high hold time

2Tfmc_ker_ck-0.5

tv(A_NE)

FMC_NEx low to FMC_A valid

th(A_NWE)

Address hold time after FMC_NWE high

3Tfmc_ker_ck-1

tv(BL_NE)

FMC_NEx low to FMC_BL valid

0.5

th(BL_NWE)

FMC_BL hold time after FMC_NWE high

3Tfmc_ker_ck-0.5

tv(Data_NE)

Data to FMC_NEx low to Data valid

2.5

th(Data_NWE)

Data hold time after FMC_NWE high

3Tfmc_ker_ck-1

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

0.5

tw(NADV)

FMC_NADV low time

Tfmc_ker_ck+0.5

1. Guaranteed by characterization results.

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