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MMA20312BVT1 数据表(PDF) 2 Page - NXP Semiconductors |
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MMA20312BVT1 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 18 page ![]() 2 RF Device Data Freescale Semiconductor, Inc. MMA20312BVT1 Table 4. Electrical Characteristics (VCC1 =VCC2 =VBIAS = 5 Vdc, 2140 MHz, TA =25C, 50 ohm system, in Freescale W--CDMA Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) (1) Gp 23.6 27.2 — dB Input Return Loss (S11) IRL — --10.7 — dB Output Return Loss (S22) ORL — --15.5 — dB Power Output @ 1dB Compression, CW P1dB — 28.2 — dBm Third Order Output Intercept Point, Two--Tone CW OIP3 — 44.5 — dBm Noise Figure NF — 3.3 — dB Supply Current (1) ICQ 62.5 70 77 mA Supply Voltage VCC — 5 — V Table 5. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 0, rated to 150 V Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 6. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Specified data is based on performance of soldered down part in W--CDMA application circuit. Figure 1. Functional Block Diagram Figure 2. Pin Connections VBA2 RFout RFin 19 28 37 12 11 10 45 6 RFout VCC1 VCC1 VBA1 VBIAS VCC2 GND GND GND VBA2 RFout RFin RFout VCC1 VCC1 VBA1 VBIAS VCC2 BIAS CIRCUIT BIAS CIRCUIT GND GND GND |
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