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ISCN182P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 ISCN182P
功能描述  isc Silicon NPN Power Transistors
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCN182P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

  ISCN182P Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCN182P Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
ISCN182P
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 0.4V(Max)@ IC=6A
·
Wide Area of Safe Operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for relay drivers, high-speed inverters, converters,
and other general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICP
Collector Current-Pulse
15
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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