NPN SILICON PLANAR TRANSISTOR

CD9014

TO-92

CBE

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

50

V

Collector -Base Voltage

VCBO

50

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

100

mA

Collector Power Dissipation

PC

625

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=1mA, IB=0

50

-

-

V

Collector -Base Voltage

VCBO

IC=100uA, IE=0

50

-

-

V

Emitter Base Voltage

VEBO

IE=100uA, IC=0

5.0

-

-

V

Collector Cut off Current

ICBO

VCB=50V, IE=0

-

-

50

nA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

-

-

50

nA

DC Current Gain

hFE

IC=1mA,VCE=5V

60

-

1000

Collector Emitter Saturation Voltage

VCE(Sat)

IC=100mA,IB=5mA

-

-

0.30

V

Emitter Base Saturation Voltage

VBE(Sat)

IC=100mA,IB=5mA

-

-

1.0

V

Dynamic Characteristics

Output Capacitance

Cob

VCB=10V,f=1MHz

-

-

3.50

pF

Transition Frequency

ft

VCE=5V,IC=10mA,

125

-

-

MHz

f=100MHz

Noise Figure

NF

VCE=5V, IC=200uA

-

-

4.0

dB

f=1KHz

hFE CLASSIFICATION

A : 60-150,

B : 100-300,

C : 200-600,

D : 400-1000,

D1 : 400-630,

D2 : 570-840,

D3 : 760-1000,

E : >800

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company