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2SC3647-R 数据表(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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2SC3647-R 数据表(HTML) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd |
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1 / 3 page ![]() 2SC3647 NPN Transistors ■ Features ● High breakdown voltage and large current capacity. ● Complementary to 2SA1417 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 2 Peak Collector Current ICM 3 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 V ℃ A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA, IE= 0 120 Collector- emitter breakdown voltage VCEO Ic= 1 mA,RBE= ∞ 100 Emitter - base breakdown voltage VEBO IE= 100μA, IC= 0 6 Collector-base cut-off current ICBO VCB= 100 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 4V , IC=0 0.1 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=100mA 0.13 0.4 Base - emitter saturation voltage VBE(sat) IC=1A, IB=100mA 0.85 1.2 DC current gain hFE VCE= 5V, IC= 100mA 100 400 Turn-ON Time ton 80 Storage Time tstg 1000 Fall Time tf 50 Collector output capacitance Cob VCB= 10V,f=1MHz 16 pF Transition frequency fT VCE= 10V, IC= 100mA 120 MHz V uA V See sepcified Test Circuit. ns ■ Classification of hfe Type 2SC3647-R 2SC3647-S 2SC3647-T Range 100-200 140-280 200-400 Marking CCR CCS CCT ht t p : // www.lgesemi.com mail:lge@lgesemi.com Revision:201 70701-P1 |
类似零件编号 - 2SC3647-R |
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类似说明 - 2SC3647-R |
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