VBKB2220 datasheet(2/6 Pages) VBSEMI

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Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--20

Zero-Gate Voltage Drain Current

IDSS

VDS=--20V, VGS=0V

--1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--0.4

--1.3

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--3A

8.2

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--3A, VGS=--4.5V

mΩ

RDS(on)2

ID=--1.5A, VGS=--2.5V

mΩ

RDS(on)3

ID=--0.5A, VGS=--1.8V

mΩ

Input Capacitance

Ciss

VDS=--10V, f=1MHz

1100

Output Capacitance

Coss

210

Reverse Transfer Capacitance

Crss

160

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

12.8

Rise Time

Turn-OFF Delay Time

td(off)

120

Fall Time

Total Gate Charge

VDS=--10V, VGS=--4.5V, ID=--6.5A

Gate-to-Source Charge

Qgs

1.9

Gate-to-Drain “Miller” Charge

Qgd

3.7

Diode Forward Voltage

VSD

IS=--6.5A, VGS=0V

--0.8

--1.2

Switching Time Test Circuit

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --3A

RL=3.33Ω

VDD= --10V

VOUT

EMH1307

VIN

--4.5V

VIN

VBKB2220

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