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IPI65R660CFD 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited

部件名 IPI65R660CFD
功能描述  isc N-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IPI65R660CFD 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IPI65R660CFD
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤0.66Ω
·
Enhancement mode
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRIPTION
·
Provide all benefits of a fast switching SJ MOSFET while offering
an extremely fast and robust body diode
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Pulsed
17
A
PD
Total Dissipation @TC=25℃
62.5
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c)
Channel-to-case thermal resistance
2.0
℃
/W


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