isc website：www.iscsemi.com

isc & iscsemi is registered trademark

S8008R

DESCRIPTION

·

With TO-220 Non-isolated packaging

·

Glass passivated junctions and center gate fire for greater

parameter uniformity and stability

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

SYMBOL

PARAMETER

MIN

UNIT

Repetitive peak off-state voltage

800

V

Repetitive peak reverse voltage

800

V

RMS on-state current

8

A

Surge non-repetitive on-state current

50Hz

60Hz

83

100

A

Average gate power dissipation

0.5

W

Operating junction temperature

-40~125

℃

Storage temperature

-40~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

Repetitive peak reverse current

0.01

0.2

0.5

mA

Repetitive peak off-state current

On-state voltage

1.6

V

Gate-trigger current

1

15

mA

Gate-trigger voltage

1.5

V

Holding current

30

mA

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damage.