1999 May 28

2

Philips Semiconductors

Product specification

Low-leakage diode

BAS45AL

FEATURES

• Continuous reverse voltage:

max. 125 V

• Repetitive peak forward current:

max. 625 mA

• Low reverse current: max. 1 nA

• Switching time: typ. 1.5 µs.

APPLICATION

• Low leakage current applications.

DESCRIPTION

Epitaxial medium-speed switching diode with a low leakage current in a small

SOD80C glass SMD package.

Fig.1 Simplified outline (SOD80C) and symbol.

handbook, 4 columns

MAM061

ka

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on a FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

repetitive peak reverse voltage

−

125

V

continuous reverse voltage

−

125

V

continuous forward current

note 1; see Fig.2

−

250

mA

repetitive peak forward current

−

625

mA

surge; see Fig.4

−

4A

−

1A

−

0.5

A

total power dissipation

−

400

mW

storage temperature

−65

+175

°C

junction temperature

−

175

°C