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ISCSM192D 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCSM192D 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Rectifier ISCSM192D FEATURES · High Current Capability · Low Leakage Current · Low forward voltage drop · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Converters · Free-Wheeling diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V IF(AV) Average Rectified Forward Current 20 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 130*2 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VF Instantaneous Forward Voltage IF= 10A ; Tj=125℃ 0.51 V IF= 10A ; Tj= 25℃ 0.5 IR Instantaneous Reverse Current VR= 60V; Tj= 25℃ 0.1 mA VR= 60V; Tj= 125℃ 15 |
类似零件编号 - ISCSM192D |
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类似说明 - ISCSM192D |
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