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IXTP4N60P 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTP4N60P 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IXTP4N60P · FEATURES · Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10V · Fully characterized avalanche voltage and current · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATION · DC/DC Converter · Ideal for high-frequency switching and synchronous rectification · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ± 30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pulsed 10 A PD Total Dissipation @TC=25℃ 89 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance 1.40 ℃ /W |
类似零件编号 - IXTP4N60P |
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类似说明 - IXTP4N60P |
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