TLV751 datasheet(5/31 Pages) TI1

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TLV751

www.ti.com

SBVS385B – DECEMBER 2019 – REVISED APRIL 2020

Product Folder Links: TLV751

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(1)

For more information about traditional and new thermalmetrics, see the Semiconductor and ICPackage Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV751P

UNIT

DSQ (WSON)

10 PINS

RθJA

Junction-to-ambient thermal resistance

74.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

90.5

°C/W

RθJB

Junction-to-board thermal resistance

39.7

°C/W

ψJT

Junction-to-top characterization parameter

3.8

°C/W

ψJB

Junction-to-board characterization parameter

39.7

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

°C/W

(1)

When the device is connected to external feedback resistors at the FB pin, external resistor tolerances are not included.

(2)

VIN = 1.5 V for VOUT < 1.0 V.

(3)

VIN = 2.0 V for VOUT < 1.5 V.

6.5 Electrical Characteristics

At operating temperature range (TJ = –40°C to +125°C),VIN = VOUT(NOM) + 0.5 V or 1.5 V (whichever isgreater), IOUT = 1 mA,

VEN =VIN, and CIN = COUT = 1 uF(unless otherwise noted); all typical values are at TJ = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VFB

Feedback voltage

TJ = 25°C

0.55

Output accuracy(1)

TJ = 25°C

–0.5%

0.5%

–40°C

≤ TJ ≤ +125°C; VOUT(NOM) + 0.5 V

(2) ≤ V

IN ≤ 6.0 V

–1.5%

1.5%

Line regulation

VOUT(NOM) + 0.5 V

(2) ≤ V

IN ≤ 6.0 V

Load regulation

0.1 mA

≤ IOUT ≤ 500 mA, VIN = VOUT + 0.5 V

(3)

0.030

V/A

IGND

Ground current

IOUT = 0 mA

TJ = 25°C

µA

–40°C

≤ TJ ≤ +125°C

µA

ISHDN

Shutdown current

VEN ≤ 0.3 V, 1.5 V ≤ VIN ≤ 6.0 V

0.1

µA

IFB

Feedback pin current

0.01

0.1

µA

ICL

Output current limit

VIN = 2 V with VOUT < 1 V;

otherwise VIN = VOUT(NOM) + 1.0 V

VOUT = VOUT(NOM) – 0.2 V,

VOUT < 1.5 V

530

720

865

VOUT = 0.9 V × VOUT(NOM),

VOUT ≥ 1.5 V

530

720

865

ISC

Short-circuit current limit

VIN = 2 V with VOUT < 1 V;

otherwise VIN = VOUT(NOM) + 1.0 V

VOUT = 0 V

310

400

VDO

Dropout voltage

IOUT = 500 mA,

–40°C

≤ TJ ≤ +125°C,

VOUT = 0.95 × VOUT(NOM)

0.65 V

≤ VOUT < 0.8 V

720

880

0.8 V

≤ VOUT < 1.0 V

585

750

1.0 V

≤ VOUT < 1.2 V

420

570

1.2 V

≤ VOUT < 1.5 V

285

400

1.5 V

≤ VOUT < 1.8 V

180

240

1.8 V

≤ VOUT < 2.5 V

140

190

2.5 V

≤ VOUT < 3.3 V

102

140

3.3 V

≤ VOUT ≤ 5.5 V

130

PSRR

Power-supply rejection ratio

VIN = VOUT(NOM) + 1.0 V,

IOUT = 50 mA

f = 1 kHz

f = 100 kHz

f = 1 MHz

Output noise voltage

BW = 10 Hz to 100 kHz, VOUT = 0.9 V

µVRMS

VUVLO

Undervoltage lockout

VIN rising

1.21

1.33

1.47

VIN falling

1.17

1.29

1.42

VUVLO,

HYST

Undervoltage lockout hysteresis

VIN hysteresis

tSTR

Startup time

From EN low-to-high transition to VOUT = VOUT(NOM) × 95%

500

700

µs

VEN(HI)

EN pin high voltage

1.0

VEN(LO)

EN pin low voltage

0.3

IEN

Enable pin current

VIN = EN = 6.0 V

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