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RN4989 数据表(PDF) 1 Page - Toshiba Semiconductor |
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RN4989 数据表(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() RN4989 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4989 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Includeing two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 47kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 100 mA Q2 Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −15 V Collector current IC −100 mA JEDEC ― EIAJ ― TOSHIBA 2-2J1A Weight: 6.8mg Unit: mm |
类似零件编号 - RN4989 |
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类似说明 - RN4989 |
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