CSC2002L datasheet(1/3 Pages) CDIL

部件名	CSC2002L

功能描述	NPN SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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NPN SILICON PLANAR EPITAXIAL TRANSISTOR

CSC2002

TO-92

Plastic Package

Designed for use in Driver Stage of High Voltage Audio Equipments.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

Collector Emitter Voltage

VCEO

Collector Base Voltage

VCBO

Emitter Base Voltage

VEBO

Collector Current

IC

Base Current

IB

Collector Power Dissipation

PC

Storage Temperature

Tstg

- 55 to +150

Junction Temperature

Tj

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut Off Current

ICBO

VCB=60V, IE = 0

100

nA

Emitter Cut Off Current

IEBO

VEB=5V, IC = 0

100

nA

DC Current Gain

hFE

(1) *

VCE=1V, IC=50mA

90

400

VCE=2V, IC=300mA

30

Collector Emitter Saturation Voltage

VCE (sat) *

IC=300mA, IB=30mA

0.6

V

Base Emitter Saturation Voltage

VBE (sat) *

IC=300mA, IB=30mA

1.2

V

Base Emitter Voltage

VBE *

VCE=6V, IC=10mA

0.6

0.7

V

Transition Frequency

fT

VCE=6V, IC= -10mA,

50

MHz

Collector to Base Capacitance

Cob

IE=0, VCB=6V, f=1MHz

15

pF

* Pulsed PW <350

µµs, Duty Cycle <2%

hFE

(1) Classification

M : 90 - 180,

mA

mW

ºC

UNITS

V

VALUE

60

5

300

60

600

ºC

+150

L : 135 - 270,

K : 200 - 400

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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