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UT2301G-AE3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT2301G-AE3-R
功能描述  P-Channel 20-V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT2301G-AE3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT2301G-AE3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT2301G-AE3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
5
10
15
20
00.5
11.5
2
V
DS - Drain-to-Source Voltage (V)
V
GS = 5 V thru 3 V
V
GS = 1.5 V
V
GS = 2.5 V
V
GS = 2 V
0.00
0.02
0.04
0.06
0.08
0
5
10
15
20
I
D -Drain Current (A)
V
GS = 2.5 V
V
GS = 4.5 V
V
GS = 10 V
0
1
2
3
4
5
0369
12
Q
g - Total Gate Charge (nC)
V
DS = 16 V
V
DS = 10 V
I
D = 5.1 A
V
DS = 5 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0
0.5
1
1.5
2
V
GS - Gate-to-Source Voltage (V)
T
C = 125 °C
T
C = - 55 °C
T
C = 25 °C
0
350
700
1050
1400
0
5
10
15
20
V
DS - Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
- 50
- 25
0
25
50
75
100
125
150
T
J - Junction Temperature (°C)
V
GS = 10 V
V
GS = 4.5 V
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT2301G-AE3-R
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