UT2302L-AE3-R datasheet(1/9 Pages) VBSEMI

部件名	UT2302L-AE3-R

功能描述	N-Channel 20 V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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N-Channel 20 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

DC/DC Converters

•

Load Switch for Portable Applications

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

e

Qg (Typ.)

20

0.028 at VGS = 4.5 V

6a

8.8 nC

0.042 at VGS = 2.5 V

6a

0.050 at VGS = 1.8 V

5.6

G

S

D

Top View

2

3

SOT-23

1

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

e. Based on TC = 25 °C.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

6a

A

TC = 70 °C

5.1

TA = 25 °C

5b, c

TA = 70 °C

4b, c

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.75

TA = 25 °C

1.04b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.1

W

TC = 70 °C

1.3

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 5 s

RthJA

80

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

60

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UT2302L-AE3-R

1

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