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UT9435G-TN3-R 数据表(PDF) 3 Page - VBsemi Electronics Co.,Ltd

部件名 UT9435G-TN3-R
功能描述  P-Channel 30-V (D-S) MOSFET
PDF  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

UT9435G-TN3-R 数据表(HTML) 3 Page - VBsemi Electronics Co.,Ltd

  UT9435G-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
12
24
36
48
60
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS =10thru 4 V
VGS =3 V
VGS = 2 V
0.0
2
0.0
4
0.0
6
0.0
8
0.
10
0.
12
0
1020
304050
60
ID - Drain Current (A)
VGS =10 V
VGS =4.5 V
0
2
4
6
8
10
0
1224
3648
60
ID =10A
Qg - Total Gate Charge (nC)
DS =10 V
V
DS =15 V
V
VDS = 20 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
2
4
6
8
10
012345
VGS - Gate-to-Source Voltage (V)
TC = 125 °C
TC = 25 °C
TC = - 55 °C
Crss
0
400
80
1200
1600
2000
0
5
10
15
20
25
Ciss
VDS - Drain-to-Source Voltage (V)
Coss
0.6
0.8
1.0
1.2
1.4
1.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
ID = - 10 A
VGS = - 10 V
VGS = - 4.5 V
0
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT9435G-TN3-R
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